PART |
Description |
Maker |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G101 E001912 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G10106 GT25G101 |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
RJP4002ANS RJP4002ANS-00-Q1 |
400 V, N-CHANNEL IGBT 3 X 4.40, 0.65 MM HEIGHT, ULTRA SMALL, PLASTIC, VSON-8 Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
FJC790 |
Camera Strobe Flash Application
|
FAIRCHILD[Fairchild Semiconductor]
|
CY25AAJ-8 CY25AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|